vishay semiconductors vlme310. for technical support, please contact: led@vishay.com document number 81231 rev. 1.1, 21-feb-11 www.vishay.com 1 high intensity smd led description this device has been designed to meet the increasing demand for alingap technology. the package of the vlme310. is the plcc-2 (equi-valent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. product group and package data ? product group: led ? package: smd plcc-2 ? product series: standard ? angle of half intensity: 60 features ? smd led with exceptional brightness ? luminous intensity categorized ? compatible with automatic placement equipment ? eia and ice standard package ? compatible with ir reflow, vapor phase and wave solder processes according to cecc 00802 and j-std-020 ? available in 8 mm tape ? low profile package ? non-diffused lens: exce llent for coupling to light pipes and backlighting ? low power consumption ? luminous intensity ratio in one packaging unit i vmax. /i vmin. ? 1.6 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? preconditioning: acc. to jedec level 2a ? aec-q101 qualified applications ? automotive: backlighting in dashboards and switches ? telecommunication: indicator and backlighting in telephone and fax ? indicator and backlight for audio and video equipment ? indicator and backlight in office equipment ? flat backlight for lc ds, switches and symbols ? general use ** please see document ?vishay material category policy?: www.vishay.com/doc?99902 19225 parts table part color, luminous intensity technology vlme3100-gs08 ye l l o w, i v > 28 mcd allngap on gaas vlme3100-gs18 ye l l o w, i v > 28 mcd allngap on gaas vlme3101-gs08 ye l l o w, i v = (35.5 to 90) mcd allngap on gaas VLME3101-GS18 ye l l o w, i v = (35.5 to 90) mcd allngap on gaas vlme3105-gs08 yellow, i v = (56 to 140) mcd allngap on gaas vlme3105-gs18 yellow, i v = (56 to 140) mcd allngap on gaas
vishay semiconductors vlme310. www.vishay.com 2 document number 81231 rev. 1.1, 21-feb-11 for technical support, please contact: led@vishay.com notes: 1) t amb = 25 c, unless otherwise specified 2) driving led in reverse direction is suitable fo r short term application. notes: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax. /i vmin. ? 1.6 note: luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. the above type numbers represent the order groups which include only a few brightness groups. only one group will be shipped on each reel (there will be no mixi ng of two groups on each reel). in order to ensure avai lability, single brightnes s groups will not be orderable. in order to ensure availability, single wavelength groups will not be orderable. in a similar manner for colors where wavelength groups are measured and binned, single wavel ength groups will be shipped on any one reel. note: wavelengths are tested at a current pulse duration of 25 ms. absolute maximum ratings 1) vlme310. parameter test condition symbol value unit reverse voltage 2) v r 5v dc forward current t amb ? 85 c i f 30 ma surge forward current t p ? 10 s i fsm 0.1 a power dissipation p v 80 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w optical and electrical characteristics 1) yellow, vlme310. parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 10 ma vlme3100 i v 28 45 mcd vlme3101 i v 35.5 90 vlme3105 i v 56 140 dominant wavelength i f = 10 ma ? d 581 588 594 nm peak wavelength i f = 10 ma ? p 590 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 2.0 2.6 v reverse voltage i r = 10 a v r 5v junction capacitance v r = 0, f = 1 mhz c j 15 pf luminous intensity classification group light intensity (mcd) standard optional min. max. m 1 - - 2 22.4 28.0 n 1 28.0 35.5 2 35.5 45 p 1 45 56 2 56 71 q 1 71 90 2 90 112 r 1 112 140 2 140 180 s 1 180 224 2 224 280 crossing table vishay osram vlme3100 lyt676 vlme3101 lyt676q1r2 vlme3105 lyt676r1s2 color classification group green dom. wavelength (nm) min. max. 1 581 584 2 583 586 3 585 588 4 587 590 5 589 592 6 591 594
document number 81231 rev. 1.1, 21-feb-11 www.vishay.com 3 vishay semiconductors vlme310. for technical support, please contact: led@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward current vs. ambient temperature figure 2. rel. luminous intensity vs. angular displacement figure 3. forward current vs. forward voltage 0 5 10 15 20 25 30 35 40 0 10203040506070 8 0 90 100 t am b - am b ient temperat u re (c) 16615 i f - for w ard c u rrent (ma) 0.4 0.2 0 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity ? - ang u lar displacement 1 10 100 1 1.5 2 2.5 3 v f - for w ard v oltage ( v ) 95 10 8 7 8 i f - for w ard c u rrent (ma) figure 4. rel. luminous intensity vs. ambient temperature figure 5. rel. lumin. intensity vs. forw. current/duty cycle figure 6. relative luminous intensity vs. forward current 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 010203040506070 8 090100 t am b - am b ient temperat u re (c) 95 10 88 0 i v rel - relati v e l u mino u s intensity i f = 20 ma 0.0 0.4 0. 8 1.2 1.6 2.0 110 96 115 8 9 i spec - specific l u mino u s intensity t p /t i f (ma) 50 520 2 0.5 0.2 0.1 0.05 0.02 1 0.01 0.1 1 10 110100 i f - for w ard c u rrent (ma) 96 115 88 i v rel - relati v e l u mino u s intensity
vishay semiconductors vlme310. www.vishay.com 4 document number 81231 rev. 1.1, 21-feb-11 for technical support, please contact: led@vishay.com package dimensions in millimeters figure 7. relative intensity vs. wavelength figure 8. forward voltage vs. ambient temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 550 570 590 610 630 650 95 10 88 1 i rel - relati v e intensity - w a v elength (nm) i f = 20 ma 1.65 1.70 1.75 1. 8 0 1. 8 5 1.90 1.95 2.00 2.05 2.10 2.15 0 10203040506070 8 0 90 100 t am b - am b ient temperat u re (c) 16616 i f = 20 ma v f rel - relati v e for w ard v oltage ( v ) yello w figure 9. forward current vs. pulse length 10 100 1000 0.01 0.1 1 10 100 t p - p u lse length (ms) 16621 i fm - for w ard c u rrent (ma) 0.2 0.5 1 t p /t = 0.01 0.02 0.05 0.1 95 11314-1 mountin g pad layout 3.5 0.2 0.9 1.75 0.10 pin identification 2. 8 + 0.15 2.2 2.4 3 + 0.15 1.2 2.6 (2. 8 ) 1.6 (1.9) 4 4 area co v ered w ith solder resist technical dra w ings according to di n specifications dra w ing- n o.: 6.541-5025.01-4 iss u e: 8 ; 22.11.05 ca
document number 81231 rev. 1.1, 21-feb-11 www.vishay.com 5 vishay semiconductors vlme310. for technical support, please contact: led@vishay.com method of taping/polarity and tape and reel smd led (vlm3 - series) vishay?s leds in smd pack ages are available in an antistatic 8 mm blister tape (in accordance with din iec 40 (co) 564) for automatic component insertation. the blister tape is a plastic strip with impressed component cavaties, covered by a top tape. taping of vlm.3.. reel package dimension in millimeters for smd leds, tape option gs08 (= 1500 pcs.) reel package dimension in millimeters for smd leds, tape option gs18 (= 8000 pcs.) preferred soldering profile figure 10. tape dimensions in mm for plcc-2 figure 11. reel dimensions - gs08 adhesi v e tape component ca v ity blister tape 94 8 670 1. 8 5 1.65 4.0 3.6 3.6 3.4 2.05 1.95 1.6 1.4 4.1 3.9 4.1 3.9 5.75 5.25 8 .3 7.7 3.5 3.1 2.2 2.0 0.25 94 8 66 8 1 8 0 17 8 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8 665 identification la b el: v ishay type gro u p tape code prod u ction code qu antity figure 12. reel dimensions - gs18 figure 13. vishay lead (pb)-fr ee reflow soldering profile (acc. to j-std-020) figure 14. double wave soldering of opto devices (all packages) 321 329 identification 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 14.4 max. 10.4 8 .4 120 1 88 57 la b el: v ishay type gro u p tape code prod u ction code qu antity 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 88 5 ir reflo w soldering profile for lead (p b )-free soldering preconditioning acc. to jedec le v el 2a max. 2 cycles allo w ed 255 c 235 c to 260 c 2 k/s ca. 200 k/s second w a v e first w a v e 5 s f u ll line: typical dotted line: process limits time (s) temperat u re (c) lead temperat u re 300 250 200 150 100 50 0 0 50 100 150 200 250 94 8 626-1 tt w soldering (acc. to cecc00 8 02) 100 c to 130 c forced cooling ca. 2 k/s ca. 5 k/s
vishay semiconductors vlme310. www.vishay.com 6 document number 81231 rev. 1.1, 21-feb-11 for technical support, please contact: led@vishay.com bar code product label a) type of component b) manufacturing plant c) sel - selection code (bin): e.g.: p1 = code for luminous intensity group 2 = code for color group d) date code year/week e) day code (e.g. 1: monday) f) batch no. g) total quantity h) company code dry packing the reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping purposes. recommended method of storage dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. the following conditions should be observed, if dry boxes are not available: ? storage temperature 10 c to 30 c ? storage humidity ? 60 % rh max. after more than 672 h under these conditions moisture content will be too high for reflow soldering. in case of moistu re absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 c + 5 c/ - 0 c and < 5 % rh (dry air/nitrogen) or 96 h at 60 c + 5 c and < 5 % rh for all device containers or 24 h at 100 c + 5 c not suitable for reel or tubes. an eia jedec standard jesd22-a112 level 2a label is included on all dry bags. example of jesd22-a112 level 2a label esd precaution proper storage and handling procedures should be followed to prevent esd damage to the devices especially when they are removed from the antistatic shielding bag. electro-static sensitive devices warning labels are on the packaging. vishay semiconductors standard bar code labels the vishay semiconductors standard bar code labels are printed at final packing areas. the labels are on each packing unit and contain vishay semiconductors specific data. 106 37 v ishay a h b c d e f g 19 8 91 al u min u m b ag la b el reel 15973 l e v e l caution this bag contains moisture ? sensitive devices 1. shelf life in sealed bag 12 months at <40c and < 90% relative humidity (rh) 2. after this bag is opened devices that will be subjected to infrared reflow, vapor - phase reflow, or equivalent processing (peak package body temp. 260c) must be: a) mounted within 672 hours at factory condition of < 30c/60%rh or b) stored at <1 0% rh. 3. devices require baking before mounting if: a) humidity indicator card is >10% when read at 23c + 5c or b) 2a or 2b is not met. 4. if baking is required, devices may be baked for: 192 hours at 40c + 5c/ - 0c and <5%rh (dry air/nitrogen) or 96 hours at 605 o cand <5%rh for all device containers or 24 hours at 1005c not suitable for reels or tubes bag seal date: ______________________________ (if blank, see bar code label) note: level defined by eia jedec standard jesd22 - a113 2a 197 8 6
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